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Issue 22, 2014
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Determination of conduction and valence band electronic structure of La2Ti2O7 thin film

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Abstract

The electronic structure of a La2Ti2O7-layered perovskite thin film was determined by resonant inelastic X-ray scattering (RIXS) measurements and FEFF calculations. It was found that the empty Ti and La d-band states dominate the conduction band of the structure, whereas the top edge of the valence band is mainly composed of filled O-p states. Furthermore, there is a pronounced overlap between occupied La-p states and O-s states, which are located deeper in the valence band.

Graphical abstract: Determination of conduction and valence band electronic structure of La2Ti2O7 thin film

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Article information


Submitted
06 Dec 2013
Accepted
11 Feb 2014
First published
12 Feb 2014

RSC Adv., 2014,4, 11420-11422
Article type
Communication

Determination of conduction and valence band electronic structure of La2Ti2O7 thin film

J. Szlachetko, M. Pichler, D. Pergolesi, J. Sá and T. Lippert, RSC Adv., 2014, 4, 11420
DOI: 10.1039/C3RA47357K

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