Determination of conduction and valence band electronic structure of La2Ti2O7 thin film

Abstract

The electronic structure of a La₂Ti₂O₇-layered perovskite thin film was determined by resonant inelastic X-ray scattering (RIXS) measurements and FEFF calculations. It was found that the empty Ti and La d-band states dominate the conduction band of the structure, whereas the top edge of the valence band is mainly composed of filled O-p states. Furthermore, there is a pronounced overlap between occupied La-p states and O-s states, which are located deeper in the valence band.