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Issue 103, 2014
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n-Type KCu3S2 microbelts: optical, electrical, and optoelectronic properties

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Abstract

KCu3S2 microbelts with lengths up to 80 μm and widths of 200–800 nm have been synthesized using a composite-hydroxide mediated (CHM) approach and their optical, electrical and optoelectronic properties were systematically characterized for the first time. As-synthesized KCu3S2 microbelts were characterized to be semiconductors with a bandgap of 1.64 eV by UV-vis absorption spectroscopy and room-temperature PL spectroscopy. Ultraviolet photoelectron spectroscopy (UPS) and the electrical transport properties of the bottom-gate field-effect transistor (FET) revealed the n-type conduction of the KCu3S2 microbelts with a conductivity as high as ∼1.85 × 103 S cm−1. A KCu3S2/Au Schottky diode was fabricated, which showed a turn-on voltage of ∼0.3 V, a rectification ratio of ∼102 to 103, and an ideality factor of 2.1. The diode possessed a photoresponse ratio Ilight/Idark ∼ 50 and a rapid response time less than 0.5 s. The systematical electrical characterization of KCu3S2 microbelts sheds light on the potential application of KCu3S2 as a photovoltaic or optoelectronic material.

Graphical abstract: n-Type KCu3S2 microbelts: optical, electrical, and optoelectronic properties

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Publication details

The article was received on 16 Oct 2014, accepted on 04 Nov 2014 and first published on 04 Nov 2014


Article type: Paper
DOI: 10.1039/C4RA12541J
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RSC Adv., 2014,4, 59221-59225

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    n-Type KCu3S2 microbelts: optical, electrical, and optoelectronic properties

    C. Wu, W. Wang, X. Wang, J. Xu, L. Luo, S. Chen, L. Wang and Y. Yu, RSC Adv., 2014, 4, 59221
    DOI: 10.1039/C4RA12541J

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