Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors†
The ability to control the appropriate layer thickness of transition metal dichalcogenides (TMDs) affords the opportunity to engineer many properties for a variety of applications in possible technological fields. Here we demonstrate that band-gap and mobility of ReSe2 nanosheet, a new member of the TMDs, increase when the layer number decreases, thus influencing the performances of ReSe2 transistors with different layers. A single-layer ReSe2 transistor shows much higher device mobility of 9.78 cm2 V−1 s−1 than few-layer transistors (0.10 cm2 V−1 s−1). Moreover, a single-layer device shows high sensitivity to red light (633 nm) and has a light-improved mobility of 14.1 cm2 V−1 s−1. Molecular physisorption is used as “gating” to modulate the carrier density of our single-layer transistors, resulting in a high photoresponsivity (Rλ) of 95 A W−1 and external quantum efficiency (EQE) of 18 645% in O2 environment. This work highlights the fact that the properties of ReSe2 can be tuned in terms of the number of layers and gas molecule gating, and single-layer ReSe2 with appropriate band-gap is a promising material for future functional device applications.