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Issue 13, 2014
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Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors

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Abstract

The ability to control the appropriate layer thickness of transition metal dichalcogenides (TMDs) affords the opportunity to engineer many properties for a variety of applications in possible technological fields. Here we demonstrate that band-gap and mobility of ReSe2 nanosheet, a new member of the TMDs, increase when the layer number decreases, thus influencing the performances of ReSe2 transistors with different layers. A single-layer ReSe2 transistor shows much higher device mobility of 9.78 cm2 V−1 s−1 than few-layer transistors (0.10 cm2 V−1 s−1). Moreover, a single-layer device shows high sensitivity to red light (633 nm) and has a light-improved mobility of 14.1 cm2 V−1 s−1. Molecular physisorption is used as “gating” to modulate the carrier density of our single-layer transistors, resulting in a high photoresponsivity (Rλ) of 95 A W−1 and external quantum efficiency (EQE) of 18 645% in O2 environment. This work highlights the fact that the properties of ReSe2 can be tuned in terms of the number of layers and gas molecule gating, and single-layer ReSe2 with appropriate band-gap is a promising material for future functional device applications.

Graphical abstract: Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors

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Supplementary files

Article information


Submitted
01 Apr 2014
Accepted
05 May 2014
First published
08 May 2014

Nanoscale, 2014,6, 7226-7231
Article type
Communication

Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors

S. Yang, S. Tongay, Y. Li, Q. Yue, J. Xia, S. Li, J. Li and S. Wei, Nanoscale, 2014, 6, 7226
DOI: 10.1039/C4NR01741B

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