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Issue 21, 2014
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Stable charge storing in two-dimensional MoS2 nanoflake floating gates for multilevel organic flash memory

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Abstract

In this study, we investigated chemically exfoliated two-dimensional (2-D) nanoflakes of molybdenum disulfide (MoS2) as charge-storing elements for use in organic multilevel memory devices (of the printed/flexible non-volatile type) based on organic field-effect transistors (OFETs) containing poly(3-hexylthiophene) (P3HT). The metallic MoS2 nanoflakes were exfoliated in 2-methoxyethanol by the lithium intercalation method and were deposited as nano-floating gates between polystyrene and poly(methyl methacrylate), used as bilayered gate dielectrics, by a simple spin-coating and low temperature (<150 °C) process. In the developed OFET memory devices, electrons could be trapped/detrapped in the MoS2 nano-floating gates by modulating the charge carrier density in the active channel through gate bias control. Optimal memory characteristics were achieved by controlling the thickness and concentration of few-layered MoS2 nanoflakes, and the best device showed reliable non-volatile memory properties: a sufficient memory window of ∼23 V, programming–reading–erasing cycling endurance of >102 times, and most importantly, quasi-permanent charge-storing characteristics, i.e., a very long retention time (longer than the technological requirement of commercial memory devices (>10 years)). In addition, we successfully developed multilevel memory cells (2 bits per cell) by controlling the gate bias magnitude.

Graphical abstract: Stable charge storing in two-dimensional MoS2 nanoflake floating gates for multilevel organic flash memory

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Publication details

The article was received on 20 Jun 2014, accepted on 07 Aug 2014 and first published on 11 Aug 2014


Article type: Communication
DOI: 10.1039/C4NR03448A
Nanoscale, 2014,6, 12315-12323

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    Stable charge storing in two-dimensional MoS2 nanoflake floating gates for multilevel organic flash memory

    M. Kang, Yeong-A. Kim, J. Yun, D. Khim, J. Kim, Y. Noh, K. Baeg and D. Kim, Nanoscale, 2014, 6, 12315
    DOI: 10.1039/C4NR03448A

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