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Issue 15, 2014
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Polarized photocurrent response in black phosphorus field-effect transistors

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Abstract

We investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements. Our results reveal that the photocurrent signals at BP-electrode junctions are mainly attributed to the photovoltaic effect in the off-state and photothermoelectric effect in the on-state, and their anisotropic feature primarily results from the directional-dependent absorption of BP crystals.

Graphical abstract: Polarized photocurrent response in black phosphorus field-effect transistors

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Publication details

The article was received on 21 Apr 2014, accepted on 06 Jun 2014 and first published on 11 Jun 2014


Article type: Paper
DOI: 10.1039/C4NR02164A
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Nanoscale, 2014,6, 8978-8983

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    Polarized photocurrent response in black phosphorus field-effect transistors

    T. Hong, B. Chamlagain, W. Lin, H. Chuang, M. Pan, Z. Zhou and Y. Xu, Nanoscale, 2014, 6, 8978
    DOI: 10.1039/C4NR02164A

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