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Issue 10, 2014
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Incorporation of a self-aligned selective emitter to realize highly efficient (12.8%) Si nanowire solar cells

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Abstract

Formation of a selective emitter in crystalline silicon solar cells improves photovoltaic conversion efficiency by decoupling emitter regions for light absorption (moderately doped) and metallization (degenerately doped). However, use of a selective emitter in silicon nanowire (Si NW) solar cells is technologically challenging because of difficulties in forming robust Ohmic contacts that interface directly with the top-ends of nanowires. Here we describe a self-aligned selective emitter successfully integrated into an antireflective Si NW solar cell. By one-step metal-assisted chemical etching, NW arrays formed only at light-absorbing areas between top-metal grids while selectively retaining Ohmic contact regions underneath the metal grids. We observed a remarkable ∼40% enhancement in blue responses of internal quantum efficiency, corresponding to a conversion efficiency of 12.8% in comparison to the 8.05% of a conventional NW solar cell.

Graphical abstract: Incorporation of a self-aligned selective emitter to realize highly efficient (12.8%) Si nanowire solar cells

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Supplementary files

Article information


Submitted
23 Jan 2014
Accepted
04 Mar 2014
First published
07 Mar 2014

Nanoscale, 2014,6, 5193-5199
Article type
Paper
Author version available

Incorporation of a self-aligned selective emitter to realize highly efficient (12.8%) Si nanowire solar cells

H. Um, K. Park, J. Jung, X. Li, K. Zhou, S. Jee and J. Lee, Nanoscale, 2014, 6, 5193
DOI: 10.1039/C4NR00455H

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