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Issue 4, 2014
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BiVO4 thin film photoanodes grown by chemical vapor deposition

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BiVO4 thin film photoanodes were grown by vapor transport chemical deposition on FTO/glass substrates. By controlling the flow rate, the temperatures of the Bi and V sources (Bi metal and V2O5 powder, respectively), and the temperature of the deposition zone in a two-zone furnace, single-phase monoclinic BiVO4 thin films can be obtained. The CVD-grown films produce global AM1.5 photocurrent densities up to 1 mA cm−2 in aqueous conditions in the presence of a sacrificial reagent. Front illuminated photocatalytic performance can be improved by inserting either a SnO2 hole blocking layer and/or a thin, extrinsically Mo doped BiVO4 layer between the FTO and the CVD-grown layer. The incident photon to current efficiency (IPCE), measured under front illumination, for BiVO4 grown directly on FTO/glass is about 10% for wavelengths below 450 nm at a bias of +0.6 V vs. Ag/AgCl. For BiVO4 grown on a 40 nm SnO2/20 nm Mo-doped BiVO4 back contact, the IPCE is increased to over 40% at wavelengths below 420 nm.

Graphical abstract: BiVO4 thin film photoanodes grown by chemical vapor deposition

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The article was received on 14 Sep 2013, accepted on 01 Nov 2013 and first published on 04 Nov 2013

Article type: Paper
DOI: 10.1039/C3CP53904K
Phys. Chem. Chem. Phys., 2014,16, 1651-1657

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    BiVO4 thin film photoanodes grown by chemical vapor deposition

    E. Alarcón-Lladó, L. Chen, M. Hettick, N. Mashouf, Y. Lin, A. Javey and J. W. Ager, Phys. Chem. Chem. Phys., 2014, 16, 1651
    DOI: 10.1039/C3CP53904K

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