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Issue 16, 2014
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High-performance Hg2+ FET-type sensors based on reduced graphene oxide–polyfuran nanohybrids

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Abstract

A new type of field-effect transistor (FET) sensor, based on reduced graphene oxide (rGO)–polyfuran (PF) nanohybrids, was strategically developed. The sensing transducer exhibited a rapid response (<1 s) and high sensitivity (10 pM) in a liquid-ion-gated FET-type Hg2+ sensor. Excellent Hg2+ discrimination in heavy metal mixtures was also monitored in real time.

Graphical abstract: High-performance Hg2+ FET-type sensors based on reduced graphene oxide–polyfuran nanohybrids

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Article information


Submitted
27 Feb 2014
Accepted
03 Apr 2014
First published
07 May 2014

Analyst, 2014,139, 3852-3855
Article type
Communication
Author version available

High-performance Hg2+ FET-type sensors based on reduced graphene oxide–polyfuran nanohybrids

J. W. Park, S. J. Park, O. S. Kwon, C. Lee and J. Jang, Analyst, 2014, 139, 3852
DOI: 10.1039/C4AN00403E

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