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Issue 11, 2014
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Simple metal/SiO2/Si planar photodetector utilizing leakage current flows through a SiO2 layer†

Baiyi Zu,a   Bin Lu,a   Yanan Guo,a   Tao Xub  and  Xincun Dou*a  
Author affiliations

* Corresponding authors

a Laboratory of Environmental Science and Technology, Xinjiang Technical Institute of Physics & Chemistry, Key Laboratory of Functional Materials and Devices for Special Environments, Chinese Academy of Sciences, Urumqi 830011, China
E-mail: xcdou@ms.xjb.ac.cn
Fax: +86-991-383-8957
Tel: +86-991-367-7875

b Department of Chemistry and Biochemistry, Northern Illinois University, DeKalb, Illinois 60115, USA

Abstract

Silicon wafers covered with a thermally grown high-quality SiO2 layer were often used as the substrate to house different nanostructures to fabricate photodetection devices. No reports have ever challenged directly fabricating photodetectors utilizing leakage current through non-high-quality SiO2 films and the intrinsic light absorption properties of Si. Herein, we show that metal/SiO2/Si planar photodetectors could be easily fabricated by simply depositing two metal electrodes (such as, Au, Ag and Al) on top of SiO2/Si wafer in which the SiO2 layer is of non-high quality. The responsivity, stability, photoresponse characteristics and light intensity sensitivity are systematically evaluated. Our results clearly show that the present conveniently and cost-effectively fabricated metal/SiO2/Si planar photodetectors are of great advantage as compared to many of the nanostructure-based photodetectors constructed on SiO2/Si substrate.

Graphical abstract: Simple metal/SiO2/Si planar photodetector utilizing leakage current flows through a SiO2 layer

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Supplementary files

Article information

https://doi.org/10.1039/C3TC32242D
Submitted
14 Nov 2013
Accepted
10 Dec 2013
First published
11 Dec 2013
J. Mater. Chem. C, 2014,2, 2045-2050
Article type
Paper
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Simple metal/SiO2/Si planar photodetector utilizing leakage current flows through a SiO2 layer

B. Zu, B. Lu, Y. Guo, T. Xu and X. Dou, J. Mater. Chem. C, 2014, 2, 2045
DOI: 10.1039/C3TC32242D

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