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Issue 42, 2013
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Flexible organic/inorganic heterojunction transistors with low operating voltage

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Abstract

Solution processed organic/inorganic bilayers have been adopted for ambipolar transistors on flexible substrates. By interface engineering, a balanced hole and electron transport is achieved with low voltage operation for poly(3-hexylthiophene) (P3HT)/ZnO bilayers. Atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD), UV-visible absorption spectroscopy and steady-state photoluminescence (PL) spectroscopy are used to analyze the heterostructure film. The ambipolar transistors were relatively stable under various light illuminations and exhibited high mechanical flexibility. The findings provide a better understanding of tunable electrical performance of the organic/inorganic heterojunction and demonstrate their potential application for low voltage electronic devices.

Graphical abstract: Flexible organic/inorganic heterojunction transistors with low operating voltage

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Publication details

The article was received on 25 Jul 2013, accepted on 08 Sep 2013 and first published on 09 Sep 2013


Article type: Paper
DOI: 10.1039/C3TC31456A
J. Mater. Chem. C, 2013,1, 7073-7080

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    Flexible organic/inorganic heterojunction transistors with low operating voltage

    Y. Zhou, S. Han, L. Zhou, Y. Yan, L. Huang, J. Huang and V. A. L. Roy, J. Mater. Chem. C, 2013, 1, 7073
    DOI: 10.1039/C3TC31456A

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