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Issue 46, 2013
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Interface engineering for suppression of flat-band voltage shift in a solution-processed ZnO/polymer dielectric thin film transistor

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Abstract

Flexible and transparent thin film transistors (FTTFTs) can lead to next generation displays that involve large area, future-oriented flexible and transparent displays. In order to achieve stable FTTFTs, solution processes of organic and inorganic compounds have received significant attention. Above all, transparent oxide semiconductors such as ZnO have been studied to enhance flexibility with high electrical performance by integration with organic dielectrics. However, interfacial traps between inorganic and organic compounds are derived by interface dipole, which induce a considerable flat band shift. Herein, we have developed a self-assembled inorganic layer (SAIL) via the photo-induced transformation of a mono-poly(dimethylsiloxane) (PDMS) layer as interface engineering. Especially, the shifting of flat band voltage (VFB) was effectively suppressed by the SAIL process, which was analyzed with a single-piece analytical model for ZnO TFTs. In addition, flexible ZnO/SAIL/polymer dielectric TFTs with low process temperature as high as 200 °C exhibited a good field-effect mobility μ = 0.28 cm2 V−1 s−1, more than 106 on–off current ratio and excellent device operational stability and flexibility.

Graphical abstract: Interface engineering for suppression of flat-band voltage shift in a solution-processed ZnO/polymer dielectric thin film transistor

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Article information


Submitted
17 Jul 2013
Accepted
08 Sep 2013
First published
09 Sep 2013

J. Mater. Chem. C, 2013,1, 7742-7747
Article type
Paper

Interface engineering for suppression of flat-band voltage shift in a solution-processed ZnO/polymer dielectric thin film transistor

K. Kim, E. Lee, J. kim, S. Y. Park, K. Lim, C. Shin and Y. S. Kim, J. Mater. Chem. C, 2013, 1, 7742
DOI: 10.1039/C3TC31376J

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