Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility†
Abstract
Ti is introduced as a dopant during the atomic layer deposition (
* Corresponding authors
a
WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
E-mail:
kibum@snu.ac.kr
Fax: +82-2-885-5820
Tel: +82-2-880-7095
b Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
c School of Engineering, Brown University, Providence, Rhode Island 02912, USA
d School of Materials Science and Engineering, Yeungnam University, Gyeongsan-si, Gyeongsangbuk-do 712-749, Korea
e School of Integrated Technology, Yonsei University, Songdo-dong, Yeonsu-gu, Incheon 406-840, Korea
Ti is introduced as a dopant during the atomic layer deposition (
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