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Issue 31, 2013
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Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility†

Do-Joong Lee,ac   Ki-Ju Kim,b   Soo-Hyun Kim,d   Jang-Yeon Kwon,e   Jimmy Xuac  and  Ki-Bum Kim*ab  
Author affiliations

* Corresponding authors

a WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
E-mail: kibum@snu.ac.kr
Fax: +82-2-885-5820
Tel: +82-2-880-7095

b Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea

c School of Engineering, Brown University, Providence, Rhode Island 02912, USA

d School of Materials Science and Engineering, Yeungnam University, Gyeongsan-si, Gyeongsangbuk-do 712-749, Korea

e School of Integrated Technology, Yonsei University, Songdo-dong, Yeonsu-gu, Incheon 406-840, Korea

Abstract

Ti is introduced as a dopant during the atomic layer deposition (ALD) growth of ZnO for use as a transparent electrode. ALD-grown Ti-doped ZnO (TZO) films are deposited via alternate stacking of ZnO and TiOx atomic-doping layers. Their growth behavior, structural, electrical and optical properties are investigated. Macroscopic film growth and doping concentration characterization show that both diethylzinc and titanium tetrakis(isopropoxide) exhibit enhanced adsorption during the ALD of TZO films. Contrary to conventional homogeneous compounds, atomic-layer Ti doping by ALD results in a much higher electrical conductivity and doping efficiency compared to its Al counterpart. Specifically, the ALD-grown TZO films show an electrical conductivity of 951 S cm−1, nearly twice that of AZO films (591 S cm−1), thanks to the high doping efficiency of Ti (41%) and its extraordinary high mobility (>20 cm2 V−1 s−1). Such high electron mobility is likely due to a smaller concentration of inactivated dopants as scattering centers.

Graphical abstract: Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility

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Article information

https://doi.org/10.1039/C3TC30469H
Submitted
12 Mar 2013
Accepted
04 Jun 2013
First published
05 Jun 2013
J. Mater. Chem. C, 2013,1, 4761-4769
Article type
Paper
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Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility

D. Lee, K. Kim, S. Kim, J. Kwon, J. Xu and K. Kim, J. Mater. Chem. C, 2013, 1, 4761
DOI: 10.1039/C3TC30469H

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