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Issue 11, 2013

Copper oxide quantum dot ink for inkjet-driven digitally controlled high mobility field effect transistors

Author affiliations

Abstract

Copper oxide (CuO) quantum dots (QDs) having a diameter of 5–8 nm were synthesized by a simple solution process. The as-synthesized QDs showed a highly crystalline monoclinic phase of CuO with a bandgap of ∼1.75 eV. The CuO QDs were further formulated as an ink for inkjet printing of CuO field effect transistors (FETs). The ink-jetting behavior of the as-formulated ink samples showed that the CuO concentration and digitally controlled number of over-prints are important factors for optimizing the uniformity and thickness of printed films with smooth edge definition. To examine the electrical properties, CuO FETs were fabricated based on inkjet-printed line and dot patterns. The inkjet-printed CuO FETs showed a p-type semiconducting nature with a high carrier mobility of 16.4 cm2 V−1 s−1 (line-pattern) and 16.6 cm2 V−1 s−1 (dot-pattern). Interestingly, when microwave-assisted annealing was applied the FET showed ∼2 times higher mobility (i.e., 28.7 for line-pattern and 31.2 cm2 V−1 s−1 for dot-pattern), which is the best among the p-type inorganic based FETs.

Graphical abstract: Copper oxide quantum dot ink for inkjet-driven digitally controlled high mobility field effect transistors

Supplementary files

Article information


Submitted
18 Dec 2012
Accepted
24 Jan 2013
First published
24 Jan 2013

J. Mater. Chem. C, 2013,1, 2112-2120
Article type
Paper

Copper oxide quantum dot ink for inkjet-driven digitally controlled high mobility field effect transistors

M. Vaseem, A.-Ra Hong, R. Kim and Y. Hahn, J. Mater. Chem. C, 2013, 1, 2112 DOI: 10.1039/C3TC00869J

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