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Issue 14, 2013
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Temperature tolerance study of high performance electrochemically gated SnO2nanowire field-effect transistors

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Abstract

Electrochemically gated field-effect transistors are fabricated with single crystalline SnO2 nanowires as a transistor channel. Excellent transistor performance and a very low-voltage operation (≤2 V) have been demonstrated. Thermal stability of the FETs is systematically examined up to 180 °C; while unchanged transistor characteristics are obtained up to 70 °C; short exposure at 110 °C is also found permissible, making such devices compatible to be integrated directly to organic photovoltaics or to various biomedical appliances.

Graphical abstract: Temperature tolerance study of high performance electrochemically gated SnO2 nanowire field-effect transistors

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Supplementary files

Article information


Submitted
09 Jan 2013
Accepted
25 Feb 2013
First published
26 Feb 2013

J. Mater. Chem. C, 2013,1, 2534-2539
Article type
Communication

Temperature tolerance study of high performance electrochemically gated SnO2 nanowire field-effect transistors

B. Nasr, Z. Zhao-Karger, D. Wang, R. Kruk, H. Hahn and S. Dasgupta, J. Mater. Chem. C, 2013, 1, 2534
DOI: 10.1039/C3TC00061C

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