Radiation effects in GaN materials and devices
Abstract
This article reviews the effects of radiation damage on GaN materials and devices such as light-emitting diodes and high electron mobility transistors.
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* Corresponding authors
a
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, Russia
E-mail:
aypolyakov@gmail.com
b Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32606, USA
c Department of Chemical Engineering, University of Florida, Gainesville, FL 32606, USA
d Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul, Korea
This article reviews the effects of radiation damage on GaN materials and devices such as light-emitting diodes and high electron mobility transistors.
A. Y. Polyakov, S. J. Pearton, P. Frenzer, F. Ren, L. Liu and J. Kim, J. Mater. Chem. C, 2013, 1, 877 DOI: 10.1039/C2TC00039C
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