Fabrication of vertically aligned graphene sheets on SiC substrates
Abstract
Fabrication of unidirectional arrays of VAGSs were achieved on nonpolar (100) and (11
0) SiC substrates by
) (C-face) SiC substrate. It is found that the basal plane orientations of the VAGSs are predominantly influenced by the orientation of the SiC substrate. The mechanisms behind the phenomena were studied and discussed. As an example, the anisotropic magnetism of