Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors
Abstract
Vertically aligned
* Corresponding authors
a
ANIC Lab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
E-mail:
Xixiang.zhang@kaust.edu.sa
b Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
c School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
d School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, Singapore 637459
Vertically aligned
J. Li, Y. Cheng, Z. Guo, Z. Wang, Z. Zhu, Q. Zhang, M. B. Chan-Park, U. Schwingenschlögl and X. X. Zhang, Nanoscale, 2013, 5, 2476 DOI: 10.1039/C3NR33263B
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