Influence of edge imperfections on the transport behavior of graphene nanomeshes
Abstract
The electronic and transport properties of
* Corresponding authors
a
Institute of Microelectronics, Tsinghua University, Beijing, China 100084
E-mail:
wangy46@tsinghua.edu.cn
Fax: +86-10-62772373
The electronic and transport properties of
X. Ji, J. Zhang, Y. Wang, H. Qian and Z. Yu, Nanoscale, 2013, 5, 2527 DOI: 10.1039/C3NR33241A
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