Influence of Mn2+ concentration on Mn2+-doped ZnS quantum dot synthesis: evaluation of the structural and photoluminescent properties†
Abstract
The intentional introduction of transition metal impurities into semiconductor
* Corresponding authors
a
Department of Physical and Analytical Chemistry, University of Oviedo, Avda, Julian Claveria 8, Oviedo, Spain
E-mail:
jcostafe@uniovi.es, asm@uniovi.es
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The intentional introduction of transition metal impurities into semiconductor
E. Sotelo-Gonzalez, L. Roces, S. Garcia-Granda, M. T. Fernandez-Arguelles, J. M. Costa-Fernandez and A. Sanz-Medel, Nanoscale, 2013, 5, 9156 DOI: 10.1039/C3NR02422A
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