Bulk nanostructured materials are made from the assembly of octahedral PbSe nanocrystals. After thermal annealing, the artificial bulk demonstrates a large difference in behavior depending on the temperature, and a large variation of room-temperature resistivity of up to seven orders of magnitude. This variation originates from the high-indexed sharp edges of the octahedral nanocrystals. As the nanocrystals are arranged in the edge-to-edge configuration, which was observed in scanning electron microscopy images, the inter-nanocrystal capacitance is small due to the small parallel area between the nanocrystals. The small capacitance results in a high thermal fluctuation voltage and drives electron transport. The temperature-dependent resistivity and the electric field-dependent current are highly in agreement with the model of fluctuation-induced tunneling conduction. Thermal annealing reduces the inter-nanocrystal separation distance, creating a large variation in the electrical properties. Specifically, octahedral-shaped PbSe nanocrystals are employed in tailoring the electron transport in bulk nanostructured materials.
You have access to this article
Please wait while we load your content...
Something went wrong. Try again?