Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates
Abstract
Mn-doped GaAs
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* Corresponding authors
a
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warszawa, Poland
E-mail:
kgas@ifpan.edu.pl
b
MAX-IV laboratory, Lund University, Box 118, SE-221 00 Lund, Sweden
E-mail:
janusz.sadowski@maxlab.lu.se
c Center for Electron Nanoscopy, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark
d Institut des Nanosciences de Paris, UMR 7588, UPMC, 4 pl. Jussieu, 75252 Paris cedex 05, France
e Division of Solid State Physics and the Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund, Sweden
f Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
Mn-doped GaAs
K. Gas, J. Sadowski, T. Kasama, A. Siusys, W. Zaleszczyk, T. Wojciechowski, J. Morhange, A. Altintaş, H. Q. Xu and W. Szuszkiewicz, Nanoscale, 2013, 5, 7410 DOI: 10.1039/C3NR01145C
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