Jump to main content
Jump to site search

Issue 4, 2013
Previous Article Next Article

Crystal structure assessment of Ge–Sb–Te phase change nanowires

Author affiliations

Abstract

Further improvement of phase change memory devices based on Ge–Sb–Te alloys imposes the reduction of the active cell dimensions to the nanoscale. We investigate the atomic arrangement of Ge1Sb2Te4 and Ge2Sb2Te5 nanowires. We identify the stacking sequence in each crystal structure by combining the direct observation by High Angle Annular Dark Field imaging and proper simulations. We find out that Ge and Sb atoms randomly share the same lattice sites, although this configuration is considered not stable according to the existing theoretical models elaborated for the bulk material.

Graphical abstract: Crystal structure assessment of Ge–Sb–Te phase change nanowires

Back to tab navigation

Supplementary files

Article information


Submitted
25 Sep 2012
Accepted
07 Dec 2012
First published
11 Dec 2012

Nanoscale, 2013,5, 1557-1563
Article type
Paper

Crystal structure assessment of Ge–Sb–Te phase change nanowires

E. Rotunno, L. Lazzarini, M. Longo and V. Grillo, Nanoscale, 2013, 5, 1557 DOI: 10.1039/C2NR32907G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.


Social activity

Search articles by author

Spotlight

Advertisements