A DLVO model for catalyst motion in metal-assisted chemical etching based upon controlled out-of-plane rotational etching and force-displacement measurements†
Abstract
Metal-assisted Chemical
* Corresponding authors
a
School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, USA
E-mail:
ohildreth@gatech.edu, owen.hildreth@nist.gov
b
Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, USA
E-mail:
konradr@mit.edu
c
Woodruff School of Mechanical Engineering and Petit Institute for Bioengineering and Bioscience, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, USA
E-mail:
agf@gatech.edu
d
Department of Electronics Engineering, The Chinese University of Hong Kong Shitan, Hong Kong, China
E-mail:
cp.wong@mse.gatech.edu
Metal-assisted Chemical
O. J. Hildreth, K. Rykaczewski, A. G. Fedorov and C. P. Wong, Nanoscale, 2013, 5, 961 DOI: 10.1039/C2NR32293E
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