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Issue 19, 2013
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Lab-on-CMOS integration of microfluidics and electrochemical sensors

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This paper introduces a CMOS–microfluidics integration scheme for electrochemical microsystems. A CMOS chip was embedded into a micro-machined silicon carrier. By leveling the CMOS chip and carrier surface to within 100 nm, an expanded obstacle-free surface suitable for photolithography was achieved. Thin film metal planar interconnects were microfabricated to bridge CMOS pads to the perimeter of the carrier, leaving a flat and smooth surface for integrating microfluidic structures. A model device containing SU-8 microfluidic mixers and detection channels crossing over microelectrodes on a CMOS integrated circuit was constructed using the chip-carrier assembly scheme. Functional integrity of microfluidic structures and on-CMOS electrodes was verified by a simultaneous sample dilution and electrochemical detection experiment within multi-channel microfluidics. This lab-on-CMOS integration process is capable of high packing density, is suitable for wafer-level batch production, and opens new opportunities to combine the performance benefits of on-CMOS sensors with lab-on-chip platforms.

Graphical abstract: Lab-on-CMOS integration of microfluidics and electrochemical sensors

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Article information

08 Apr 2013
12 Jul 2013
First published
15 Jul 2013

Lab Chip, 2013,13, 3929-3934
Article type

Lab-on-CMOS integration of microfluidics and electrochemical sensors

Y. Huang and A. J. Mason, Lab Chip, 2013, 13, 3929
DOI: 10.1039/C3LC50437A

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