Step-edge induced ordered growth: targeting to assemble super long horizontal nanowire alignment in large-scale

Abstract

Nowadays, the development of nano-synthesis has turned to controllable design for specific demands in micro-nano device application, to be integrated into functional units more conveniently with low-cost and efficiency principles. In this case, an appropriate approach for directly obtaining horizontally aligned nanowires in a large scale would be of great significance in future micro-nano device integration. Here, on the HOPG surface, we managed to achieve this. The approach is versatile to various kinds of materials. Horizontally aligned nanowires of Al–C based materials, such as Al₄C₃ and Al₄O₄C, were achieved. All of the nanowires exhibit a high degree ordered alignments and possess super aspect ratios with uniform widths of about 100 nm and lengths on the millimeter level. We believe the assembly mechanism lies in a step-edge induced ordered growth process, through which quaternary Al–Si–O–C nanoball alignment could also be obtained. It is expected that this method could be beneficial to adjust many useful materials for micro device integration in the future.