Dynamic random access memory devices based on bismuth sulfide nanoplates prepared from a single source precursor†
Abstract
Semiconducting
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* Corresponding authors
a
Key laboratory of Organic Synthesis in Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, China
E-mail:
lujm@suda.edu.cn, xuqingfeng@suda.edu.cn
Fax: +86 (0)512-65880367
Tel: +86 (0)512-6588 0368
b Key Laboratory of Energy-Saving and Environmental Protection Materials Test & Technical Service Center of Jiangsu Province, Soochow University, Suzhou, China
Semiconducting
G. Liu, L. Xu, F. Zhou, Y. Zhang, H. Li, Q. F. Xu and J. M. Lu, Phys. Chem. Chem. Phys., 2013, 15, 11554 DOI: 10.1039/C3CP50700A
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