We report the fabrication of Resistor-Capacitor (RC) filters and field effect transistors (FETs) based on pencil drawings on paper, which contain turbostratic graphite crystallites as evidenced from Raman analysis. Pencil drawings have been employed as resistor and an ion gel, 1-butyl-3-methylimidazolium octyl sulfate mixed with polydimethylsiloxane (PDMS) as dielectric, for the fabrication of RC filters with a cut-off frequency of 9 kHz. With ion gel as gate dielectric, an ambipolar electric field effect has been obtained from the pencil-trace at low operating voltages. The carrier mobilities were found to be ∼106 and 59 cm2 V−1 s−1 for holes and electrons, respectively. The mobility value showed only 15% variation among the devices tested, truly remarkable given the simplicity of the fabrication process.
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