Investigating and understanding the initial growth mechanisms of catalyst-free growth of 1D SiC nanostructures†
Abstract
The vapor–solid mechanism of 1D SiC
* Corresponding authors
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Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Sudaemun-Gu, Seoul 120-749, Republic of Korea
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The vapor–solid mechanism of 1D SiC
Y. Y. Choi and D. J. Choi, CrystEngComm, 2013, 15, 6963 DOI: 10.1039/C3CE40745D
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