Issue 32, 2013
From the journal:

CrystEngComm

Microwave-assisted seeded growth of the submicrometer-thick and pure b-oriented MFI zeolite films using an ultra-dilute synthesis solution†

Chaozheng Wang,a   Xiufeng Liu,a   Jian Lia  and  Baoquan Zhang*ab  

* Corresponding authors

a State Key Laboratory of Chemical Engineering, School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China
E-mail: bqzhang@tju.edu.cn
Fax: +86 22 87898959
Tel: +86 22 27405165

b College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, China

Abstract

A chitosan layer is utilized for controlled fabrication of MFI zeolite films in dilute synthesis solution under microwave irradiation. The dense, ca. 600 nm-thick and solely b-oriented silicalite-1 films can be formed onto the chitosan supported silicalite-1 monolayer under microwave irradiation for 1 h.

Graphical abstract: Microwave-assisted seeded growth of the submicrometer-thick and pure b-oriented MFI zeolite films using an ultra-dilute synthesis solution

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Supplementary files

Article information

DOI
https://doi.org/10.1039/C3CE40644J
Article type
Communication
Submitted
15 Apr 2013
Accepted
07 Jun 2013
First published
07 Jun 2013

CrystEngComm, 2013,15, 6301-6304

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Microwave-assisted seeded growth of the submicrometer-thick and pure b-oriented MFI zeolite films using an ultra-dilute synthesis solution

C. Wang, X. Liu, J. Li and B. Zhang, CrystEngComm, 2013, 15, 6301 DOI: 10.1039/C3CE40644J

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