Synthesis of mesoporous antimony-doped tin oxide (ATO) thin films and investigation of their electrical conductivity†
Abstract
Mesoporous
* Corresponding authors
a
World Premier International (WPI) Research Center, International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
E-mail:
YAMAUCHI.Yusuke@nims.go.jp
b Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan
c Polymer Materials Research Laboratory, Tsukuba Research Center, Kuraray Co., Ltd., 41 Miyukigaoka, Tsukuba, Ibaraki 305-0841, Japan
d Precursory Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
e Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan
Mesoporous
N. Suzuki, Y. Kamachi, Y. Chiang, K. C.-W. Wu, S. Ishihara, K. Sato, N. Fukata, M. Matsuura, K. Maekawa, H. Tanabe, K. Ariga and Y. Yamauchi, CrystEngComm, 2013, 15, 4404 DOI: 10.1039/C3CE40189H
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