Issue 3, 2013
From the journal:

CrystEngComm

On the effect of silicon in CVD of sp2 hybridized boron nitride thin films

Mikhail Chubarov,*a   Henrik Pedersen,a   Hans Högberga  and  Anne Henrya  

* Corresponding authors

a Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
E-mail: mihails.cubarovs@liu.se
Fax: +46 13 28 8983
Tel: +46 13 13 7568

Abstract

The influence of silicon on the growth of epitaxial rhombohedral boron nitride (r-BN) films deposited on sapphire (0001) by chemical vapor deposition is investigated. X-ray diffraction measurements and secondary ion mass spectrometry show that silicon favors the formation of r-BN and is incorporated into the film.

Graphical abstract: On the effect of silicon in CVD of sp2 hybridized boron nitride thin films

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Article information

DOI
https://doi.org/10.1039/C2CE26423D
Article type
Communication
Submitted
03 Sep 2012
Accepted
07 Nov 2012
First published
08 Nov 2012
This article is Open Access

CrystEngComm, 2013,15, 455-458

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On the effect of silicon in CVD of sp2 hybridized boron nitride thin films

M. Chubarov, H. Pedersen, H. Högberg and A. Henry, CrystEngComm, 2013, 15, 455 DOI: 10.1039/C2CE26423D

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