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Issue 47, 2013

Direct imprinting of MoS2 flakes on a patterned gate for nanosheet transistors

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Abstract

Nanosheet transistors based on mechanically exfoliated MoS2 and other transition metal dichalcogenide layers have already been reported demonstrating good device performances. In an approach to synthesize a large area two-dimensional (2D) sheet, chemical vapor deposition methods were reported and the transfer of those sheets onto other arbitrary substrates was also attempted, although studies on the direct imprinting of such 2D semiconductor sheets are rare. Here, we report on a direct imprinting method, the polydimethylsiloxane (PDMS)-adopting approach, that enables the fabrication of patterned bottom-gate MoS2 nanosheet field-effect transistors (FETs) on any substrate; using direct printing methods MoS2 FETs were successfully fabricated on glass. Since our FETs were also controlled to be a depletion or an enhanced mode with the modulated MoS2 thickness on a patterned bottom-gate, our imprinting approach is regarded as a meaningful advance toward 2D nanosheet electronics.

Graphical abstract: Direct imprinting of MoS2 flakes on a patterned gate for nanosheet transistors

Supplementary files

Article information


Submitted
11 Sep 2013
Accepted
04 Oct 2013
First published
07 Oct 2013

J. Mater. Chem. C, 2013,1, 7803-7807
Article type
Communication

Direct imprinting of MoS2 flakes on a patterned gate for nanosheet transistors

K. Choi, Y. T. Lee, S. Min, H. S. Lee, T. Nam, H. Kim and S. Im, J. Mater. Chem. C, 2013, 1, 7803 DOI: 10.1039/C3TC31796J

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