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Issue 26, 2013
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Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer

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Abstract

Atomic layer deposition (ALD) was used to grow both PbS quantum dots and Al2O3 barrier layers in a solid-state quantum dot-sensitized solar cell (QDSSC). Barrier layers grown prior to quantum dots resulted in a near-doubling of device efficiency (0.30% to 0.57%) whereas barrier layers grown after quantum dots did not improve efficiency, indicating the importance of quantum dots in recombination processes.

Graphical abstract: Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer

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Supplementary files

Article information


Submitted
04 Mar 2013
Accepted
20 May 2013
First published
29 May 2013

J. Mater. Chem. A, 2013,1, 7566-7571
Article type
Communication

Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer

T. P. Brennan, O. Trejo, K. E. Roelofs, J. Xu, F. B. Prinz and S. F. Bent, J. Mater. Chem. A, 2013, 1, 7566
DOI: 10.1039/C3TA10903H

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