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Issue 19, 2013
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Bases for time-resolved probing of transient carrier dynamics by optical pump–probe scanning tunneling microscopy

Munenori Yokota,a   Shoji Yoshida,a   Yutaka Mera,†b   Osamu Takeuchi,a   Haruhiro Oigawaa  and  Hidemi Shigekawa*a  
Author affiliations

* Corresponding authors

a University of Tsukuba, Tsukuba 305-8571, Japan
E-mail: hidemi@ims.tsukuba.ac.jp
Web: http://dora.bk.tsukuba.ac.jp
Fax: +81-29-853-5276
Tel: +81-29-853-5276

b The University of Tokyo, Department of Applied Physics, Tokyo, Japan

Abstract

The tangled mechanism that produces optical pump–probe scanning tunneling microscopy spectra from semiconductors was analyzed by comparing model simulation data with experimental data. The nonlinearities reflected in the spectra, namely, the excitations generated by paired laser pulses with a delay time, the logarithmic relationship between carrier density and surface photovoltage (SPV), and the effect of the change in tunneling barrier height depending on SPV, were examined along with the delay-time-dependent integration process used in measurement. The optimum conditions required to realize reliable measurement, as well as the validity of the microscopy technique, were demonstrated for the first time.

Graphical abstract: Bases for time-resolved probing of transient carrier dynamics by optical pump–probe scanning tunneling microscopy

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Article information

https://doi.org/10.1039/C3NR02433D
Submitted
11 May 2013
Accepted
09 Jul 2013
First published
11 Jul 2013
Nanoscale, 2013,5, 9170-9175
Article type
Paper
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Bases for time-resolved probing of transient carrier dynamics by optical pump–probe scanning tunneling microscopy

M. Yokota, S. Yoshida, Y. Mera, O. Takeuchi, H. Oigawa and H. Shigekawa, Nanoscale, 2013, 5, 9170
DOI: 10.1039/C3NR02433D

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