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Issue 12, 2013
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Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy

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Abstract

The catalyst-free molecular beam epitaxial growth of GaN nanowires and their heterostructures on a SiOx template is studied in detail. It was found that by optimizing the growth temperature, highly uniform and vertically aligned GaN nanowires and InGaN/GaN heterostructures with excellent optical properties can be obtained on a SiOx template in a large-scale. This work provides an entirely new avenue for GaN nanowire based optoelectronic devices.

Graphical abstract: Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy

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Supplementary files

Article information


Submitted
23 Jan 2013
Accepted
01 Apr 2013
First published
09 Apr 2013

Nanoscale, 2013,5, 5283-5287
Article type
Communication

Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy

S. Zhao, M. G. Kibria, Q. Wang, H. P. T. Nguyen and Z. Mi, Nanoscale, 2013, 5, 5283 DOI: 10.1039/C3NR00387F

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