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Issue 20, 2013
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Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

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Abstract

We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.

Graphical abstract: Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

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Supplementary files

Article information


Submitted
23 Jun 2013
Accepted
04 Aug 2013
First published
08 Aug 2013

Nanoscale, 2013,5, 9572-9576
Article type
Communication

Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

M. Y. Chan, K. Komatsu, S. Li, Y. Xu, P. Darmawan, H. Kuramochi, S. Nakaharai, A. Aparecido-Ferreira, K. Watanabe, T. Taniguchi and K. Tsukagoshi, Nanoscale, 2013, 5, 9572
DOI: 10.1039/C3NR03220E

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