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Issue 45, 2013
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Growth and oxidation of graphene on Rh(111)

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Abstract

The growth and oxidation of graphene supported on Rh(111) was studied in situ by high-resolution X-ray photoelectron spectroscopy. By variation of propene pressure and surface temperature the optimum growth conditions were identified, yielding graphene with low defect density. Oxidation of graphene was studied at temperatures between 600 and 1000 K, at an oxygen pressure of ∼2 × 10−6 mbar. The oxidation follows sigmoidal reaction kinetics. In the beginning, the reaction rate is limited by the number of defects, which represent the active sites for oxygen dissociation. After an induction period, the reaction rate increases and graphene is rapidly removed from the surface by oxidation. For graphene with a high defect density we found that the oxidation is faster. In general, a reduction of the induction period and a faster oxidation occur at higher temperatures.

Graphical abstract: Growth and oxidation of graphene on Rh(111)

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Article information


Submitted
06 Sep 2013
Accepted
27 Sep 2013
First published
03 Oct 2013

This article is Open Access

Phys. Chem. Chem. Phys., 2013,15, 19625-19631
Article type
Paper

Growth and oxidation of graphene on Rh(111)

K. Gotterbarm, W. Zhao, O. Höfert, C. Gleichweit, C. Papp and H. Steinrück, Phys. Chem. Chem. Phys., 2013, 15, 19625
DOI: 10.1039/C3CP53802H

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