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Issue 42, 2013
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Structural transitions of epitaxial ceria films on Si(111)

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Abstract

The structural changes of a (111) oriented CeO2 film grown on a Si(111) substrate covered with a hex-Pr2O3(0001) interface layer due to post deposition annealing are investigated. X-ray photoelectron spectroscopy measurements revealing the near surface stoichiometry show that the film reduces continuously upon extended heat treatment. The film is not homogeneously reduced since several coexisting crystalline ceria phases are stabilized due to subsequent annealing at different temperatures as revealed by high resolution low energy electron diffraction and X-ray diffraction. The electron diffraction measurements show that after annealing at 660 °C the ι-phase (Ce7O12) is formed at the surface which exhibits a Image ID:c3cp52688g-t1.gif structure. Furthermore, a Image ID:c3cp52688g-t2.gif surface structure with a stoichiometry close to Ce2O3 is stabilized after annealing at 860 °C which cannot be attributed to any bulk phase of ceria stable at room temperature. In addition, it is shown that the fully reduced ceria (Ce2O3) film exhibits a bixbyite structure. Polycrystalline silicate (CeSixOy) and crystalline silicide (CeSi1.67) are formed at 850 °C and detected at the surface after annealing above 900 °C.

Graphical abstract: Structural transitions of epitaxial ceria films on Si(111)

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Article information


Submitted
27 Jun 2013
Accepted
04 Sep 2013
First published
30 Sep 2013

Phys. Chem. Chem. Phys., 2013,15, 18589-18599
Article type
Paper

Structural transitions of epitaxial ceria films on Si(111)

H. Wilkens, O. Schuckmann, R. Oelke, S. Gevers, M. Reichling, A. Schaefer, M. Bäumer, M. H. Zoellner, G. Niu, T. Schroeder and J. Wollschläger, Phys. Chem. Chem. Phys., 2013, 15, 18589
DOI: 10.1039/C3CP52688G

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