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Issue 27, 2013
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Crystal structure, properties and nanostructuring of a new layered chalcogenide semiconductor, Bi2MnTe4

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Abstract

A new layered chalcogenide semiconductor, Bi2MnTe4, was discovered. It was prepared by melting and annealing methods and its crystal structure was determined by powder X-ray diffraction and Rietveld refinement. It showed p-type conducting behavior at room temperature and it was quite consistent with our density functional theory calculations. Furthermore, based on the metastability of Bi2MnTe4, a nanostructuring strategy was attempted to fabricate nanostructured bulk composites. Nanostructured Bi2Te3/MnTe2 composite was successfully achieved in this work, and its thermoelectric properties were discussed.

Graphical abstract: Crystal structure, properties and nanostructuring of a new layered chalcogenide semiconductor, Bi2MnTe4

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Publication details

The article was received on 15 Apr 2013, accepted on 09 May 2013 and first published on 10 May 2013


Article type: Paper
DOI: 10.1039/C3CE40643A
CrystEngComm, 2013,15, 5532-5538

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    Crystal structure, properties and nanostructuring of a new layered chalcogenide semiconductor, Bi2MnTe4

    D. S. Lee, T. Kim, C. Park, C. Chung, Y. S. Lim, W. Seo and H. Park, CrystEngComm, 2013, 15, 5532
    DOI: 10.1039/C3CE40643A

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