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Issue 66, 2013
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Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature

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Abstract

Multiple etching pathways for the formation of porous Si nanostructures are visualized with the addition of ethylene glycol in metal-assisted chemical etching. The monotonic transition from solid to porous morphologies of Si nanostructures along with remarkable photoluminescence (PL) emission efficiency and distinct wetting phenomena can be observed.

Graphical abstract: Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature

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Supplementary files

Article information


Submitted
09 May 2013
Accepted
11 Jun 2013
First published
12 Jul 2013

Chem. Commun., 2013,49, 7295-7297
Article type
Communication

Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature

C. Chen and C. Wong, Chem. Commun., 2013, 49, 7295
DOI: 10.1039/C3CC43466D

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