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Issue 40, 2013
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Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass

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Abstract

The application of a novel bipolar molecular glass in field-effect transistors leads to devices with photoinduced magnetoresistance (MR) sign change. In darkness a low external magnetic field increases the resistance (positive MR up to +0.1%), while a magnetic-field induced resistance decrease (negative MR up to −6.5%) can be achieved under illumination.

Graphical abstract: Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass

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Article information


Submitted
22 Jan 2013
Accepted
27 Mar 2013
First published
02 Apr 2013

Chem. Commun., 2013,49, 4564-4566
Article type
Communication

Photoinduced sign change of the magnetoresistance in field-effect transistors based on a bipolar molecular glass

E. Tatarov, T. Reichert, T. P. I. Saragi, A. Scheffler, R. Ueberschaer, C. Bruhn, T. Fuhrmann-Lieker and J. Salbeck, Chem. Commun., 2013, 49, 4564
DOI: 10.1039/C3CC40552D

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