Issue 26, 2012
From the journal:

RSC Advances

Temperature dependent phonon Raman scattering of Heusler alloy Co2MnxFe1−xAl/GaAs films grown by molecular-beam epitaxy

Zhenni Zhan,a   Zhigao Hu,*a   Kangkang Meng,b   Jianhua Zhaob  and  Junhao Chua  

* Corresponding authors

a Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics Engineering, East China Normal University, Shanghai, People's Republic of China
E-mail: zghu@ee.ecnu.edu.cn
Fax: +86-21-54345119
Tel: +86-21-54345150

b State Key Laboratory of Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, People's Republic of China

Abstract

Co2MnxFe1−xAl full-Heusler alloy films have been grown on GaAs (001) by molecular-beam epitaxy. Three representative phonon modes observed from Raman scattering show different variation trends in the temperature range 87–873 K. The 2F1u modes at 569 and 947 cm−1 show anomalous change with increasing temperature, which can be due to the phase transition. The Curie temperature (Tc) can be evaluated as 828 K for x = 0, 823 K for x = 0.3, 818 K for x = 0.7, and 788 K for x = 1, respectively. This can be ascribed to the fact that the lattice parameter of the films becomes larger with Mn composition.

Graphical abstract: Temperature dependent phonon Raman scattering of Heusler alloy Co2MnxFe1−xAl/GaAs films grown by molecular-beam epitaxy

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Article information

DOI
https://doi.org/10.1039/C2RA21255B
Article type
Paper
Submitted
21 Jun 2012
Accepted
16 Aug 2012
First published
16 Aug 2012

RSC Adv., 2012,2, 9899-9903

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Temperature dependent phonon Raman scattering of Heusler alloy Co2MnxFe1−xAl/GaAs films grown by molecular-beam epitaxy

Z. Zhan, Z. Hu, K. Meng, J. Zhao and J. Chu, RSC Adv., 2012, 2, 9899 DOI: 10.1039/C2RA21255B

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