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Issue 23, 2012
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State filling dependent luminescence in hybrid tunnel coupled dot–well structures

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Abstract

A strong dependence of quantum dot (QD)–quantum well (QW) tunnel coupling on the energy band alignment is established in hybrid InAs/GaAs–InxGa1−xAs/GaAs dot–well structures by changing the QW composition to shift the QW energy through the QD wetting layer (WL) energy. Due to this coupling a rapid carrier transfer from the QW to the QD excited states takes place. As a result, the QW photoluminescence (PL) completely quenches at low excitation intensities. The threshold intensities for the appearance of the QW PL strongly depend on the relative position of the QW excitonic energy with respect to the WL ground state and the QD ground state energies. These intensities decrease by orders of magnitude as the energy of the QW increases to approach that of the WL due to the increased efficiency for carrier tunneling into the WL states as compared to the less dense QD states below the QW energy.

Graphical abstract: State filling dependent luminescence in hybrid tunnel coupled dot–well structures

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Article information


Submitted
12 Dec 2011
Accepted
05 Oct 2012
First published
25 Oct 2012

Nanoscale, 2012,4, 7509-7516
Article type
Paper

State filling dependent luminescence in hybrid tunnel coupled dot–well structures

Y. I. Mazur, V. G. Dorogan, M. E. Ware, E. Marega Jr, M. Benamara, Z. Ya. Zhuchenko, G. G. Tarasov, C. Lienau and G. J. Salamo, Nanoscale, 2012, 4, 7509 DOI: 10.1039/C2NR32477F

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