Issue 5, 2012

Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy

Abstract

The unambiguous measurement of carrier concentration and mobility in semiconductor nanowires remains a challenging task. This is a consequence of their one-dimensional nature and the incompatibility with Hall or van der Pauw measurements. We propose a method that allows the direct determination of mobility and carrier concentration in nanowires in a contact-less manner. We demonstrate how forward Raman scattering enables the measurement of phonon–plasmon interactions. By applying this method to p-type GaAs nanowires, we were able to directly obtain values of the carrier concentration between 3.0 × 1017 and 7.4 × 1018 cm−3 and a mobility of 31 cm2 (V s)−1 at room temperature. This study opens the path towards the study of plasmon–phonon interactions in semiconductor nanowires.

Graphical abstract: Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy

Article information

Article type
Paper
Submitted
05 Dec 2011
Accepted
21 Dec 2011
First published
06 Jan 2012

Nanoscale, 2012,4, 1789-1793

Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy

B. Ketterer, E. Uccelli and A. Fontcuberta i Morral, Nanoscale, 2012, 4, 1789 DOI: 10.1039/C2NR11910B

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