Issue 3, 2012
From the journal:

Nanoscale

Nanoscale probing of transient carrier dynamics modulated in a GaAs–PIN junction by laser-combined scanning tunneling microscopy

Shoji Yoshida,a   Yasuhiko Terada,a   Ryuji Oshima,a   Osamu Takeuchia  and  Hidemi Shigekawa*a  

* Corresponding authors

a Institute of Applied Physics, University of Tsukuba, Tsukuba, Japan
E-mail: hidemi@ims.tsukuba.ac.jp
Web: http://dora.bk.tsukuba.ac.jp
Fax: +81-29-853-5276
Tel: +81-29-853-5276

Abstract

The modulation of carrier dynamics in a GaAs–PIN junction after photoexcitation by an ultrashort-pulse laser was probed by shaken-pulse-pair-excited scanning tunneling microscopy (SPPX-STM), which enables nanoscale mapping of time-resolved STM images. The effect of the built-in potential on the carrier dynamics, diffusion and drift, which cannot be probed by the optical pump-probe technique, was successfully visualized in real space.

Graphical abstract: Nanoscale probing of transient carrier dynamics modulated in a GaAs–PIN junction by laser-combined scanning tunneling microscopy

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Article information

DOI
https://doi.org/10.1039/C2NR11551D
Article type
Communication
Submitted
21 Oct 2011
Accepted
13 Dec 2011
First published
10 Jan 2012

Nanoscale, 2012,4, 757-761

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Nanoscale probing of transient carrier dynamics modulated in a GaAs–PIN junction by laser-combined scanning tunneling microscopy

S. Yoshida, Y. Terada, R. Oshima, O. Takeuchi and H. Shigekawa, Nanoscale, 2012, 4, 757 DOI: 10.1039/C2NR11551D

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