Crystalline nanostructure and morphology of TriF-IF-dione for high-performance stable n-type field-effect transistors†
Abstract
The device performance and stability of n-type organic field-effect transistors (OFETs) based on 1,2,3,7,8,9-hexafluoro-indeno[1,2-b]fluorene-6,12-dione (TriF-IF-dione) were investigated. The electrical characteristics of TriF-IF-dione FETs were optimized by systematically controlling the dielectric surface properties via insertion of organic interlayers, such as self-assembled monolayers (NH2–, CH3–, and CF3–) or polymeric layers (polystyrene,