Issue 2, 2012
From the journal:

Journal of Materials Chemistry

Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor†

César Moreno,*a   Raphael Pfattner,b   Marta Mas-Torrent,*b   Joaquim Puigdollers,a   Stefan T. Bromley,cd   Concepció Rovira,b   Jaume Vecianab  and  Ramón Alcubillaa  

* Corresponding authors

a Universitat Politècnica Catalunya and Centre de Recerca en Nanoenginyeria (CrNE), Barcelona, Spain
E-mail: cesar.moreno.sierrar@upc.edu

b Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) and Networking Research Center on Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN), Campus Universitat Autònoma de Barcelona, Bellaterra, Catalonia, Spain
E-mail: mmas@icmab.es

c Departament de Química Física and Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona, Barcelona, Spain

d Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Spain

Abstract

Theoretical and experimental investigations combining in situKelvin probe microscopy (KPM) and macroscopic electrical studies are employed to explore the intrinsic transport in dithiophene-tetrathiafulvalene (DT-TTF) single crystal organic field-effect transistors. Our work demonstrates that ambipolar behavior is not restricted only to materials possessing a high electron affinity and thus may be a more general phenomenon.

Graphical abstract: Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor

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Article information

DOI
https://doi.org/10.1039/C1JM15037E
Article type
Communication
Submitted
06 Oct 2011
Accepted
03 Nov 2011
First published
16 Nov 2011

J. Mater. Chem., 2012,22, 345-348

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Evidence of intrinsic ambipolar charge transport in a high band gap organic semiconductor

C. Moreno, R. Pfattner, M. Mas-Torrent, J. Puigdollers, S. T. Bromley, C. Rovira, J. Veciana and R. Alcubilla, J. Mater. Chem., 2012, 22, 345 DOI: 10.1039/C1JM15037E

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