Issue 3, 2012

Electronic structure of superlattices of graphene and hexagonal boron nitride

Abstract

We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

Graphical abstract: Electronic structure of superlattices of graphene and hexagonal boron nitride

Article information

Article type
Paper
Submitted
30 Sep 2011
Accepted
19 Oct 2011
First published
14 Nov 2011

J. Mater. Chem., 2012,22, 919-922

Electronic structure of superlattices of graphene and hexagonal boron nitride

T. P. Kaloni, Y. C. Cheng and U. Schwingenschlögl, J. Mater. Chem., 2012, 22, 919 DOI: 10.1039/C1JM14895H

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