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Issue 2, 2012
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Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications†

Hui Bi,a   Shengrui Sun,a   Fuqiang Huang,*a   Xiaoming Xieb  and  Mianheng Jiangb  
Author affiliations

* Corresponding authors

a State Key Laboratory of High Performance Ceramics and Superfine Microstructure and CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
E-mail: huangfq@mail.sic.ac.cn
Fax: +86 21 52416360
Tel: +86 21 52411620

b State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

Abstract

We first demonstrate the use of few layer graphene films directly grown on SiO2 substrates obtained by ambient pressure chemical vapor deposition (APCVD) as counter electrodes in dye-sensitized solar cells (DSSCs). The layer number and crystal size of graphene films can be tuned by changing growth temperature, growth time and gas flow ratio (CH4 : H2). The continuous graphene films exhibit extremely excellent electrical transport properties with a sheet resistance of down to 63.0 Ω sq−1 and extremely high mobility of up to 201.4 cm2 v−1 s−1. The highly conductive graphene films as counter electrodes of DSSCs achieve a photovoltaic efficiency of 4.25%, which is comparable to the DSSC efficiency (4.32%) based on FTO counter electrodes. Our work indicates the great potential of CVD graphene films directly grown on dielectric substrates for photovoltaic and electronic applications.

Graphical abstract: Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications

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Article information

https://doi.org/10.1039/C1JM14778A
Submitted
26 Sep 2011
Accepted
05 Oct 2011
First published
03 Nov 2011
J. Mater. Chem., 2012,22, 411-416
Article type
Paper
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Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications

H. Bi, S. Sun, F. Huang, X. Xie and M. Jiang, J. Mater. Chem., 2012, 22, 411
DOI: 10.1039/C1JM14778A

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