Lite Version|Standard version

To gain access to this content please
Log in via your home Institution.
Log in with your member or subscriber username and password.
Download

We grow biaxially textured heteroepitaxial crystal silicon (c-Si) films on display glass as a low-cost photovoltaic material. We first fabricate textured CaF2 seed layers using ion-beam assisted deposition, then coat the CaF2 with a thin, evaporated epitaxial Ge buffer and finally deposit heteroepitaxial silicon on the Ge. The silicon is grown by hot-wire chemical vapor deposition, a high-rate, scalable epitaxy technology. Electron and X-ray diffraction confirm the biaxial texture of the CaF2 and epitaxial growth of the subsequent layers. Transmission electron microscopy reveals columnar silicon grains about 500 nm across. We fabricate a proof-of-concept epitaxial film c-Si solar cell with an open circuit voltage of 375 mV that is limited by minority carrier lifetime.

Graphical abstract: Biaxially-textured photovoltaic film crystal silicon on ion beam assisted deposition CaF2 seed layers on glass

Page: ^ Top